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Effects of Ti and TiN Capping Layers on Cobalt-silicided MOS Device Characteristics in Embedded DRAM and Logic
Effects of Ti and TiN Capping Layers on Cobalt-silicided MOS Device Characteristics in Embedded DRAM and Logic
Detailed Information
- 자료유형
- 보고서
- ISSN
- 12297801
- 서명/저자
- Effects of Ti and TiN Capping Layers on Cobalt-silicided MOS Device Characteristics in Embedded DRAM and Logic / Jong-Chae Kim ; Yeong-Cheol Kim ; Jun-Ho Choy
- 발행사항
- 서울 : 한국세라믹학회, 2001.
- 형태사항
- pp. 782
- 기타저자
- Jong-Chae Kim
- 기타저자
- Yeong-Cheol Kim
- 기타저자
- Jun-Ho Choy
- 모체레코드
- 모체정보확인
- Control Number
- shingu:67040
MARC
008011016s2001 ulkaILa kor■022 ▼a12297801
■245 ▼a Effects of Ti and TiN Capping Layers on Cobalt-silicided MOS Device Characteristics in Embedded DRAM and Logic▼dJong-Chae Kim▼eYeong-Cheol Kim▼eJun-Ho Choy
■260 ▼a서울▼b한국세라믹학회▼c2001.
■300 ▼app. 782
■653 ▼aEFFECTS▼aTI▼aTIN▼aCAPPING▼aLAYERS▼aCOBALTSILICIDED▼aMOS▼aDEVICE▼aCHARACTERISTICS▼aEMBEDDED▼aDRAM▼aLOGIC
■700 ▼aJong-Chae Kim
■700 ▼aYeong-Cheol Kim
■700 ▼aJun-Ho Choy
■773 ▼t한국세라믹학회지▼g2001년 9월 (제38권 9호)▼d2001, 09
■SIS ▼aS012871▼b64638▼h1▼s2▼fP
■URL ▼ahttp://www.hanrimwon.co.kr
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